Název:
Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure
Autoři:
Hájek, František ; Hospodková, Alice ; Oswald, Jiří ; Slavická Zíková, Markéta Typ dokumentu: Příspěvky z konference Konference/Akce: Student scientific conference of solid state engineering and materials /8./, Sedliště (CZ), 20180917
Rok:
2018
Jazyk:
eng
Abstrakt: Luminescence of InGaN/GaN multiple quantum well (MQW) structure is strongly affected by spontaneous and piezoelectric polarizations. To suppress them, doping with shallow impurities (e. g. Si) can be used. This works presents the effects of Si doping in different layers around the MQW area. On the basis of photoluminescence and cathodoluminescence measurements and band structure simulation, the piezoelectric field is most efficiently reduced when both layers under and over MQW area are Si doped.\n
Klíčová slova:
luminescence; nitrides; quantum wells; semiconductor doping Zdrojový dokument: Proceedings of the 8th Student scientific conference of solid state engineering and materials, ISBN 978-80-01-06511-2