Název:
Effect of the substrate crystalline orientation on the surface morphology and boron incorporation into epitaxial diamond layers
Autoři:
Voves, J. ; Pošta, A. ; Davydova, Marina ; Laposa, A. ; Povolný, V. ; Hazdra, P. ; Lambert, Nicolas ; Sedláková, Silvia ; Mortet, Vincent Typ dokumentu: Příspěvky z konference Konference/Akce: International Conference NANOCON 2020 /12./, Brno (CZ), 20201021
Rok:
2021
Jazyk:
eng
Abstrakt: Epitaxial growth of diamond is critically important for the fabrication of diamond-based electronic devices. The emerging study of the epitaxial diamond growth on the (113) vicinal surfaces evidences highly needed high growth rates and low structural defects concentrations with both p- and n-type doping. In this work, we compare the morphology and dopant concentration incorporation of heavily boron-doped (113) epitaxial diamond layers with conventionally studied (100) and (111) epitaxial layers. Epitaxial layers were grown using resonance cavity Microwave Plasma Enhanced Chemical Vapor Deposition (MWPECVD) system. The surface morphology of epitaxial layers was studied by optical microscopy and atomic force microscopy, whereas the boron incorporation homogeneity was determined by Raman spectroscopy mapping.
Klíčová slova:
boron doping; defects; diamond; epitaxy; Raman mapping Číslo projektu: GA20-11140S (CEP), CZ.02.1.01/0.0/0.0/16_019/0000760, EF16_019/0000760 Poskytovatel projektu: GA ČR, OP VVV - SOLID21, GA MŠk Zdrojový dokument: NANOCON 2020. 12th International Conference on Nanomaterials - Research & Application. Conference proceedings, ISBN 978-80-87294-98-7, ISSN 2694-930X
Instituce: Fyzikální ústav AV ČR
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Informace o dostupnosti dokumentu:
Dokument je dostupný v příslušném ústavu Akademie věd ČR. Původní záznam: http://hdl.handle.net/11104/0327191