No (565)
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565
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Plasma deposition system for long electrically conductive tubes
Hubička, Zdeněk
2018 - Czech
The report describes a plasma deposition method with pulsed hollow cathode for coatings of long electrically conductive tubes. Zpráva popisuje plazmatickou metodu využívající pulzní výboj v duté katodě pro povlakování dlouhých elektricky vodivých trubek.
Keywords:
plasma; hollow cathode discharge; thin film
Available at various institutes of the ASCR
Plasma deposition system for long electrically conductive tubes
The report describes a plasma deposition method with pulsed hollow cathode for coatings of long electrically conductive tubes.
Hybrid reactive HiPIMS deposition system for the deposition of functional metal oxide thin films
Hubička, Zdeněk; Čada, Martin; Olejníček, Jiří; Kšírová, Petra; Tvarog, Drahoslav
2018 - Czech
The report describes a hybrid reactive HiPIMS deposition system for the deposition of functional metal oxide thin films with defined optical properties. Zpráva popisuje hybridní reaktivní HiPIMS depoziční systém s pro depozici optických funkčních vrstev na bázi oxidů kovů s definovanými optickými vlastnostmi.
Keywords:
plasma; discharge; thin film; HiPIMS
Available at various institutes of the ASCR
Hybrid reactive HiPIMS deposition system for the deposition of functional metal oxide thin films
The report describes a hybrid reactive HiPIMS deposition system for the deposition of functional metal oxide thin films with defined optical properties.
Final report of the project - Secure erasing memory chips using electromagnetic pulse
Fitl, Přemysl; Vrňata, M.; Fišer, L.; Novotný, Michal; Scholtz, V.; Vlček, J.; Tomeček, D.
2018 - Czech
The subject of this contractual research was the theoretical analysis and the mathematical model of the problem of electromagnetic pulse penetration and involvement of storage function of the memory chips. The report includes description of the experimental preparation memory chip, methodology of memory media testing, experiment shielding, software scanning of the memory chip, EMP generation, EMP intensity measurement. \nSummary of results of experiments of EMP influence on the memory media.\nA comprehensive research report was handed over to NUKIB representatives on 31 May 2018. NUKIB representatives confirmed receipt of the report. \nDefense of the project results took place on 27.6.2018 in the NUKIB building. Project goals were fulfilled. The agreed amount was invoiced for this report.\n\n Předmětem smluvního výzkumu byl teoretický rozbor a matematický model problematiky průniku elektromagnetického pulzu. Popis přípravy experimentu obsahující odpájení a odpouzdřování paměťových čipů, metodiky testování paměťových médií, stínění experimentu, stínění zkoumaného paměťového čipu, generování EMP, měření intenzity EMP. \nShrnutí výsledků provedeného experimentu.\nSouhrnná výzkumná zpráva byla předána zástupcům NUKIB dne 31.5.2018. \nZástupci NUKIB potvrdili převzetí zprávy. Oponentura výsledků projektu proběhla 27.6.2018 v budově NUKIB. Projekt byl splněn. Za vypracování této zprávy byla fakturována sjednaná částka.\n\n\n
Keywords:
flash memory; memory erasing; electromagnetic pulse
Available at various institutes of the ASCR
Final report of the project - Secure erasing memory chips using electromagnetic pulse
The subject of this contractual research was the theoretical analysis and the mathematical model of the problem of electromagnetic pulse penetration and involvement of storage function of the memory ...
XXIII Czech-Polish seminar: Structural and ferroelectric phase transitions
Hlinka, Jiří; Pokorný, Jan; Bubnov, Alexej
2018 - English
This is the Book of Abstracts for the XXIII Czech-Polish Seminar (CPSEM-2018 conference) held in Kouty on May 21 - 25, 2018. The special objective of the conference is expressed in the conference subtitle: Structural and Ferroelectric Phase Transitions. The continuous worldwide interest to this conference series is proving that it has a respected position within the series of International/European conferences covering all interdisciplinary field of the research related to structural and ferroelectric phase transitions. At the CPSEM-2018 conference more than 110 participants from 14 countries all over the world presented 16 invited lectures and selected 36 oral contributions. About 60 posters were presented during two poster sessions.
Keywords:
ferroelectric phase transitions; structural
Available at various institutes of the ASCR
XXIII Czech-Polish seminar: Structural and ferroelectric phase transitions
This is the Book of Abstracts for the XXIII Czech-Polish Seminar (CPSEM-2018 conference) held in Kouty on May 21 - 25, 2018. The special objective of the conference is expressed in the conference ...
Modeling of monocrystalline magnesium microbeam bending
Němeček, J.; Maňák, Jan; Němeček, J.
2018 - English
This paper presents a numerical simulation of a micro-scale experiment on a magnesium alloy. Three dimensional numerical FE model with elastoplastic behavior respecting crystal anisotropy was used to fit experimental load displacement curves.
Keywords:
magnesium; microbeams; crystal anisotropy; FE model
Available at various institutes of the ASCR
Modeling of monocrystalline magnesium microbeam bending
This paper presents a numerical simulation of a micro-scale experiment on a magnesium alloy. Three dimensional numerical FE model with elastoplastic behavior respecting crystal anisotropy was used to ...
Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles
Stuchlík, Jiří; Fajgar, Radek; Kupčík, Jaroslav; Remeš, Zdeněk; Stuchlíková, The-Ha
2018 - English
Substrates with ZnO (or ITO) conductive layers were covered by thin film of a-Si:H deposited by PECVD technique. Under a turbo-molecular vacuum (10-4 Pa) the reactive laser ablation (RLA) was used to cover this a-Si:H thin film by germanium NPs. The RLA was performed using focused excimer ArF laser beam (193 nm, 100 mJ/pulse) under SiH4 background atmosphere (0.5 Pa). As a target the elemental germanium was used. Reaction between ablated Ge and silane led to formation of Ge NPs covered by thin SiGe layer. Then the deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes was alternated and applied a few times. The Si:H thin films with integrated Ge NPs were characterized by microscopic, spectroscopic and diffraction techniques. I-V characteristics of final diode structures without and under illumination were measured as well as their electroluminescence behaviour.
Keywords:
PECVD; a-Si:H diode structures; Ge; nanoparticles
Available at various institutes of the ASCR
Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles
Substrates with ZnO (or ITO) conductive layers were covered by thin film of a-Si:H deposited by PECVD technique. Under a turbo-molecular vacuum (10-4 Pa) the reactive laser ablation (RLA) was used to ...
Characterization of hydrogenated silicon thin films and diode structures with integrated silicon and germanium nanoparticles
Stuchlík, Jiří; Fajgar, R.; Remeš, Zdeněk; Kupčík, Jaroslav; Stuchlíková, Hana
2018 - English
P-I-N diode structures based on the thin films of amorphous hydrogenated silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique were prepared with embedded Si and Ge nanoparticles. The Reactive Laser Ablation (RLA) of germanium target was used to cover the intrinsic a-Si:H layer by Ge NPs under a low pressure of the silane. The RLA was performed using focused excimer ArF laser beam under SiH4 background atmosphere. Reaction between ablated Ge NPs and SiH4 led to formation of Ge NPs covered by thin GeSi:H layer. The deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes were alternated repeatedly. Volt-ampere characteristics of final diode structures were measured in dark and under illumination as well as their electroluminescence spectra.
Keywords:
a-Si:H; PIN diode; thin films; reactive laser ablation; nanoparticles
Available at various institutes of the ASCR
Characterization of hydrogenated silicon thin films and diode structures with integrated silicon and germanium nanoparticles
P-I-N diode structures based on the thin films of amorphous hydrogenated silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique were prepared with embedded Si and Ge ...
Histology and micro-CT study of diamond-coated metal bone implants in rabbit femurs
Potocký, Štěpán; Ižák, Tibor; Dragounová, Kateřina; Kromka, Alexander; Rezek, Bohuslav; Mandys, V.; Bartoš, M.; Bačáková, Lucie; Sedmera, David
2018 - English
A conformal coating of a thin diamond layer on three-dimensional metal bone implants was shown directly on stainless steel and TiAl6V4 cortical screw implant using ultrasonic and composite polymer pretreatment method. The best conformation coverage was achieved in the case of the WO3 interlayer for both stainless steel and TiAl6V4 screws. The process of osteointegration of the screw implants into rabbit femurs is evidenced by the formation of a bone edge via desmogenous ossification around the screws in less than six months after implantation. A detailed evaluation of the tissue reaction around the implanted screws shows good biocompatibility of diamond-coated metal bone implants.
Keywords:
screw implant; diamond coating; osteointegration; histology
Available at various institutes of the ASCR
Histology and micro-CT study of diamond-coated metal bone implants in rabbit femurs
A conformal coating of a thin diamond layer on three-dimensional metal bone implants was shown directly on stainless steel and TiAl6V4 cortical screw implant using ultrasonic and composite polymer ...
Electronic transfer between nanostructures. Negative differential resistance in conductive polymers.
Král, Karel; Menšík, Miroslav
2018 - English
The effect of negative differential resistance can be observed experimentally in some material systems based on polymers. These observation are explained usually to be due to the presence of certain carrier traps which can capture the carriers of the electric current. In the present theoretical work we are going to show that besides this carrier trapping origin of the negative differential resistance there can also be an intrinsic mechanism present, causing such an effect. Namely, instead of the traps, the electron-phonon interaction can cooperate with the tunneling of the charge carriers between their localized states and can provide the effect the negative differential resistance. This electron-phonon interaction is included in a non-perturbative way. The theory will be briefly summarized and explained.
Keywords:
electronic transfer; charge transfer; nanostructures; quantum dots; nonequilibrium transport theory
Available at various institutes of the ASCR
Electronic transfer between nanostructures. Negative differential resistance in conductive polymers.
The effect of negative differential resistance can be observed experimentally in some material systems based on polymers. These observation are explained usually to be due to the presence of certain ...
Mechanical properties of Cr-DLC layers prepared by hybrid laser technology
Písařík, Petr; Jelínek, Miroslav; Remsa, J.; Tolde, Z.
2017 - English
Diamond like carbon (DLC) layers have excellent biological properties for use in medicine for coating implants, but poor adhesion to biomedical alloys (titanium alloys, chromium alloys and stainless steel). The adhesion can be improved by doping the DLC layer by chromium, as described in this article. Chromium doped diamond like carbon layers (Cr DLC) were deposited by hybrid deposition system using KrF excimer laser (deposition diamond like carbon - graphite target) and\nmagnetron sputtering (deposition chromium - chromium target). Carbon and chromium contents were determined by wavelength dispersive X-ray spectroscopy.\n
Keywords:
DLC; chromium doped; mechanical properties; PLD
Available at various institutes of the ASCR
Mechanical properties of Cr-DLC layers prepared by hybrid laser technology
Diamond like carbon (DLC) layers have excellent biological properties for use in medicine for coating implants, but poor adhesion to biomedical alloys (titanium alloys, chromium alloys and stainless ...
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